Simulation and Fabrication of Microwave S-Band Low-Phase Noise Oscillator Using Pentagonal Shaped Substrate Integrated Waveguide (SIW) Resonator

Document Type : Original Article

Authors

1 Master's student, Department of Electronics and Telecommunications, Faculty of Electrical and Computer Engineering, Shiraz University, Shiraz, Iran

2 Associate Professor, Department of Telecommunications and Electronics, Faculty of Electrical and Computer Engineering, Shiraz University, Shiraz, Iran

Abstract

In this article, a low-phase noise microwave S-Band oscillator using a pentagonal shaped SIW resonator is presented. The resonator is designed on a 20 mil RO4003 substrate and is simulated in Ansys HFSS. The loaded quality factor of the resonator is obtained to be 72. The oscillator is simulated and designed using Agilent ADS. Our measurement results show that the phase noise is better than – 140 dBc/Hz at 1MHz frequency deviation. The oscillation frequency is 3.16 GHz, the output power is 9.1 dBm, and the harmonic rejection is better than 40 dBc. The fabricated oscillator is suitable for low-cost high-frequency systems.

Keywords

References

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History

  • Receive Date: 30 October 2019
  • Revise Date: 07 January 2020
  • Accept Date: 12 January 2020
  • Publish Date: 20 February 2020

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